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Your search returned 35 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 2002 Volume number : 49 Issue: 01 |
Growth Of Ultrahigh Carbon-Doped Ingaas And Its Application To Inp/Ingaas(C) Hbts
(Article)
Subject:
Compound Semiconductor Devices
Author:
J. C
Han
J
Song
page:
1
-
6
Quasi-Two-Dimensional Transmission Line Model (Qtd-Tlm) For Planar Ohmic Contact Studies
(Article)
Subject:
Silicon Devices
Author:
E.F.
Chor
page:
105
-
111
Intrinsic Threshold Voltage Fluctuations In Decanano Mosfets Due To Local Oxide Thickness Variations
(Article)
Subject:
Silicon Devices
Author:
A.
Asenov
S.
Kaya
J. H.
Davies
page:
112
-
119
Novel Phenomenon Of Avalanche Breakdown Saturation With Negative Resistance In A Bipolar Transistor
(Article)
Subject:
Solid-State Device Phenomena
Author:
T.
Unagami
page:
120
-
124
Study Of A 50-Nm Nmosfet By Ensemble Monte Carlo Simulation Including A New Approach To Surface Roughness And Impurity Scattering In The Si Inversion Layer
(Article)
Subject:
Solid-State Device Phenomena
Author:
D
Vasileska
D.K
Ferry
page:
125
-
132
Essential Physics Of Carrier Transport In Nanoscale Mosfets
(Article)
Subject:
Solid-State Device Phenomena
Author:
M.
Lundstrom
page:
133
-
141
Properties Of The Transient Of Avalanche Transistor Switching At Extreme Current Densities
(Article)
Subject:
Solid-State Device Phenomena
Author:
J. T
Kostamovaara
page:
142
-
149
Preparation Of Thin-Film Transistors With Chemicla Bath Deposited Cdse And Cds Thin Films
(Article)
Subject:
Compound Semiconductor Devices
Author:
F. Y.
Gan
page:
15
-
18
Low-Loss, High-Voltage 6h-Sic Epitaxial P-I-N Diode
(Article)
Subject:
Solid-State Power And High Voltage
Author:
S
Tamura
A
Kimoto
J
Matsunami
page:
150
-
154
An Experimental Investigation On The Nature Of Reverse Current Of Silicon Power Pn-Junctions
(Article)
Subject:
Solid-State Power And High Voltage
Author:
V. N.
Obreja
page:
155
-
163
A Monolithic Fully-Integrated Vacuum-Sealed Cmos Pressure Sensor
(Article)
Subject:
Solid State Sensors And Actuators
Author:
A. V.
Chavan
K. D.
Wise
page:
164
-
169
Stacked Amorphous Silicon Color Sensors
(Article)
Subject:
Solid State Sensors And Actuators
Author:
D.
Knipp
P. G.
Herzog
page:
170
-
176
Applications Of Blow-Up Theory To Thyristor Turn-On
(Article)
Subject:
Thyristor Controlled Series Compensator
Author:
J.
Paisana
page:
177
-
178
Ultralow Leakage Characteristics Of Ultrathin Gate Oxides (~3 Nm) Prepared By Anodization Followed By High-Temperature Annealing
(Article)
Subject:
Ultralow Leakage
,
Characteristics
,
Oxide Thickness
Author:
C. C.
Ting
page:
177
-
178
Lateral Thin-Film Schottky (Ltfs) Rectifier On Soi: A Device With Higher Than Plane Parallel Breakdown Voltage
(Article)
Subject:
Lateral Thin-Film Schottky (Ltfs)
Author:
Y.
Singh
page:
181
-
183
The Low Frequency Noise In Reverse Biased Rectifier Diodes
(Article)
Subject:
Low Frequency Electrical Noise
,
Rectifier
,
Diodes
Author:
O.
Marinov
page:
184
-
186
A Scalable Meander-Line Resistor Model For Silicon Rfics
(Article)
Subject:
Scalable Systems
,
Silicon Devices
Author:
M.J.
Deen
page:
187
-
189
Microwave Performance And Modeling Of Inas/Aisb/Gasb Resonant Interband Tunneling Diodes
(Article)
Subject:
Compound Semiconductor Devices
Author:
P.
Fay
page:
19
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24
Compact Threshold-Voltage Model For Short-Channel Partially Depleted (Pd) Soi Dynamic-Threshold Mos (Dtmos) Devices
(Article)
Subject:
Threshold Voltage
,
Short Channel Effects
,
Dynamic
Author:
J. B
Kuo
page:
190
-
195
Mosfet Subthreshold Compact Modeling With Effective Gae Overdrive
(Article)
Subject:
Mosfets
,
Subthreshold Dynamic Threshold Voltage Mos
,
Modeling
Author:
K.W
Lim
X
Zhou
page:
196
-
199
A Simple, High Performance Tfsoi Complementary Bicmos Technology For Low Power Wireless Applications
(Article)
Subject:
High Performance
,
Complementary Pass-Gate Logic
,
Bicmos
Author:
M.J
Kumar
page:
200
-
201
The Psd Transfer Function
(Article)
Subject:
Psd Transfer Function
Author:
M.
De Bakkar
P. W.
Verbeek
page:
202
-
206
Two-Dimensional Quantum Effects In Nanoscale Mosfets
(Article)
Subject:
Compound Semiconductor Devices
Author:
A.
Pirovano
page:
25
-
31
Breakdown Voltage And Reverse Recovery Characteristics Of Free-Standing Ganschottky Rectifiers
(Article)
Subject:
Compound Semiconductor Devices
Author:
J. W.
Johnson
page:
32
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36
Analysis Of Gate-Lag Phenomena In Recessed-Gate And Buried-Gate Gaas Mesfets
(Article)
Subject:
Compound Semiconductor Devices
Author:
A.
Wakabayashi
page:
37
-
41
Formation Of Titanium Silicide On Narrow Gates Using Laser Thermal Processing
(Article)
Subject:
Materials Processing And Packaging
Author:
Gita Dewan
Verma
S
Talwar
page:
42
-
47
Temperature Behavior Of Visible And Infrared Electroluminescent Devices Fabricated On Erbium-Doped Gan
(Article)
Subject:
Optoelectronics, Displays And Imaging
Author:
A. C
Steckley
M. J.
Garter
page:
48
-
54
Clarification Of Floating-Body Effects On Drive Current And Short Channel Effects In Deep Sub-0o.25 Um Partially-Depleted Soi Mosfets
(Article)
Subject:
Silicon Devices
Author:
T
Matsumoto
page:
55
-
60
Sub-100-Nm Vertical Mosfet With Threshold Voltage Adjustment
(Article)
Subject:
Silicon Devices
Author:
K
Mori
page:
61
-
66
Arsenic/Phosphorus Ldd Optimization By Taking Advantage Of Phosphrus Transient Enhanced Diffusion For High Voltage Input/Output Cmos Devices
(Article)
Subject:
Silicon Devices
Author:
C. C
Wang
page:
67
-
71
Novel Soi P-Channel Mosfets With Higher Strain In Si Channel Using Double Sige Heterostructures
(Article)
Subject:
Compound Semiconductor Devices
Author:
T
Mizuno
N
Sugiyama
A
Tezuka
S.-I
Takagi
page:
7
-
14
Accuracy Of Approximations In Mosfet Charge Models
(Article)
Subject:
Silicon Devices
Author:
C. C.
Mcandrew
J. J.
Victory
page:
72
-
81
A Method To Extract Mobility Degradation And Total Series Resistance Of Fully-Depleted Soi Mosfets
(Article)
Subject:
Silicon Devices
Author:
F. J
Garcia
page:
82
-
88
Sub-50-Nm Physical Gate Length Cmos Technology And Behond Using Steep Halo
(Article)
Subject:
Silicon Devices
Author:
H
Wakabayashi
page:
89
-
95
On The Performance Advantage Of Pd/Soi Cmos With Floating Bodies
(Article)
Subject:
Silicon Devices
Author:
Jerry G
Fossum
page:
96
-
104
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